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Welcome to the TCAD-ChargeCollectionSimulation wiki!

This repository uses a 2D simulation domain to study the charge collection property of silicon pixel sensors. The simulation domain contains 4 pixels, with 2 full pixels and 2 half-pixels, as illustrated below.

This simulation contains various geometrical parameters that can be easily customised, such as the pixel pitch, the size of the charge collection electrode, the p-stop, and the bulk resistivity. For the electrical properties and the charge collection properties, the avalanche generation, the radiation damage (TID and bulk damage), and the parameters for charge deposition can be easily setup as well. A detailed description of the parameters can be found in the example simulation project (see chapter: A Quick Start)

A detailed project description about the parameters can be found in the documentation of the project (after extracting the compressed project in /Example/):

The documentation was written in HTML.